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| PROFET(R) BTS 410 E2 Smart Highside Power Switch Features * Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 65 V 4.7 ... 42 V 220 m 1.8 A 5 A TO-220AB/5 5 1 Straight leads 5 5 1 Standard SMD Application * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS(R) technology. Fully protected by embedded protection functions. + V bb 3 Voltage source Overvoltage protection Current limit Gate protection V Logic Voltage sensor Charge pump Level shifter Rectifier Open load ESD Logic detection Limit for unclamped ind. loads OUT 2 IN Temperature sensor 5 Load 4 ST Short circuit detection GND (R) PROFET Load GND 1 Signal GND 1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistors in series with IN and ST connections, reverse load current limited by connected load. Semiconductor Group 1 03.97 BTS 410 E2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 6.6 , td= 400 ms, IN= low or high Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. IL = 1.8 A, ZL = 2.3 H, 0 : Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Symbol Vbb VLoad dump4) Values 65 100 self-limited -40 ...+150 -55 ...+150 50 4.5 1 2 -0.5 ... +6 5.0 5.0 Unit V V A C W J kV V mA IL Tj Tstg Ptot EAS VESD VIN IIN IST Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min ---chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5): Values typ max -2.5 -75 35 -Unit K/W 2) 3) 4) 5) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 BTS 410 E2 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics Tj=25 C: Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7, Tj =-40...+150C Turn-on time IN to 90% VOUT: to 10% VOUT: Turn-off time IN RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Operating Parameters Operating voltage 6) Undervoltage shutdown On-state resistance (pin 3 to 5) IL = 1.6 A RON -- 190 390 220 440 -1 m IL(ISO) IL(GNDhigh) 1.6 -- 1.8 -- A mA s ton toff dV /dton -dV/dtoff 12 5 --- ----- 125 85 3 6 V/s V/s Tj =-40...+150C: Tj =25C: Tj =-40...+150C: Tj =-40...+150C: Undervoltage restart Undervoltage restart of charge pump see diagram page 12 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150C: Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: Overvoltage protection7) Ibb=4 mA Tj=-40...+25C: Standby current (pin 3) VIN=0 Tj= 150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150C 6) 7) Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) 4.7 2.9 2.7 ---42 40 -65 ----- ----5.6 0.1 --0.1 70 10 18 -1 42 4.5 4.7 4.9 6.0 -52 ---15 25 20 2.1 V V V V V V V V V A A mA Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7. Semiconductor Group 3 BTS 410 E2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions Initial peak short circuit current limit (pin 3 to 5)9), IL(SCp) ( max 450 s if VON > VON(SC) ) Tj =-40C: Tj =25C: Tj =+150C: Repetitive overload shutdown current limit IL(SCr) VON= 8 V, Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC) min value valid only, if input "low" time exceeds 60 s 9 -4 --- -12 -5 -- 23 -15 -450 A A s V Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150C: IL= 1 A, Tj =-40..+150C: Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 10) Diagnostic Characteristics Open load detection current (on-condition) VON(CL) 61 --150 --- 68 -8.5 -10 -- 73 75 ---32 VON(SC) Tjt Tjt -Vbb V C K V Tj=-40 ..150C: IL (OL) 2 -150 mA 8) 9) Add IST, if IST > 0, add IIN, if VIN>5.5 V Short circuit current limit for max. duration of td(SC) max=450 s, prior to shutdown 10) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). Semiconductor Group 4 BTS 410 E2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Input and Status Feedback11) Input turn-on threshold voltage Tj =-40..+150C: Tj =-40..+150C: Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 5 V Status invalid after positive input slope Tj=-40 ... +150C: (short circuit) Status invalid after positive input slope Tj=-40 ... +150C: (open load) Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +50 uA: ST low voltage Tj =-40...+150C, IST = +1.6 mA: VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST SC) td(ST) 1.5 1.0 -1 10 -300 --0.5 -25 --- 2.4 --30 70 450 1400 V V V A A s s VST(high) VST(low) 5.0 -- 6 -- -0.4 V 11) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 5 BTS 410 E2 Truth Table Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H 12) Status 412 B2 H H L H H L L H L L L14) L14) L L 410 D2 H H H L H L H H (L13)) L L L14) L14) L L 410 E2/F2 H H H L H L H H (L13)) L L H H H H 410 G2 H H H L H H H H (L13)) L L H H H H 410 H2 H H L H H L L H L L H H H H H L L H H L L L L L L X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11...12) Terms Ibb I IN 2 I ST V V bb R IN VST 4 ST GND 1 GND IGND VOUT IN 3 Vbb IL PROFET OUT 5 VON Status output +5V R ST(ON) ST GND ESDZD Input circuit (ESD protection) R IN I ESD-Zener diode: 6 V typ., max 5 mA; RST(ON) < 250 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). ESDZDI1 ZDI2 GND I I ZDI1 6 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). 12) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for open load detection. 13) Low resistance short V to output may be detected in ON-state by the no-load-detection bb 14) No current sink capability during undervoltage shutdown Semiconductor Group 6 BTS 410 E2 Open-load detection Short circuit detection Fault Condition: VON > 8.5 V typ.; IN high + V bb ON-state diagnostic condition: VON < RON * IL(OL); IN high + V bb V ON ON VON OUT Logic unit Short circuit detection OUT Logic unit Open load detection Inductive and overvoltage output clamp + V bb V Z GND disconnect 3 IN Vbb PROFET 4 ST GND 1 V GND OUT VON OUT GND 2 PROFET 5 VON clamped to 68 V typ. V bb V IN V ST Overvolt. and reverse batt. protection + V bb V Z2 Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. R IN IN GND disconnect with GND pull up 3 IN Vbb PROFET 4 Signal GND Logic R ST ST V Z1 PROFET GND 2 OUT 5 R GND ST GND 1 VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 , RIN, RST= 15 k V V bb V IN ST V GND Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Semiconductor Group 7 BTS 410 E2 Vbb disconnect with energized inductive load 3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT with an approximate solution for RL > 0 : EAS= IL* L IL*RL *(V + |VOUT(CL)|)* ln (1+ ) |VOUT(CL)| 2*RL bb Maximum allowable load inductance for a single switch off 5 L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0 L [mH] 10000 bb Normal load current can be handled by the PROFET itself. 1000 Vbb disconnect with charged external inductive load S high 2 IN 3 Vbb PROFET 4 ST GND 1 OUT 100 10 5 D 1 V bb 1 2 3 4 5 6 IL [A] If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Typ. transient thermal impedance chip case ZthJC = f(tp, D), D=tp/T ZthJC [K/W] 10 Inductive Load switch-off energy dissipation E bb E AS V bb PROFET OUT EL GND ZL ELoad IN 1 = ST { L RL ER 0.1 Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is 2 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, tp [s] Semiconductor Group 8 BTS 410 E2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection with 150 in GND connection, protection against loss of ground Type Logic version BTS 412 B2 410D2 410E2 410F2 410G2 410H2 B X D X X E F X X X X X X X X X X X X X X X X X X X X X X X X -18) X X X X X X X X X X X X X X X -18) X X X X X X -18) X X X X X -18) X X X X X X X X X X X X X X X X X X X X X G H X X X X 307 308 Overtemperature protection with hysteresis Tj >150 C, latch function15)16) Tj >150 C, with auto-restart on cooling Short circuit to GND protection switches off when VON>3.5 V typ. and Vbb> 7 V typ15) (when first turned on after approx. 150 s) switches off when VON>8.5 V typ.15) (when first turned on after approx. 150 s) Achieved through overtemperature protection Open load detection in OFF-state with sensing current 30 A typ. in ON-state with sensing voltage drop across power transistor X Undervoltage shutdown with auto restart Overvoltage shutdown with auto Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage restart17) Status output type CMOS Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X X X X X X X X X X X X X X X X X Load current limit high level (can handle loads with high inrush currents) low level (better protection of application) Protection against loss of GND Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 16) With latch function. Reseted by a) Input low, b) Undervoltage 17) No auto restart after overvoltage in case of short circuit 18) Low resistance short V to output may be detected in ON-state by the no-load-detection bb 15) Semiconductor Group 9 BTS 410 E2 Timing diagrams Figure 1a: Vbb turn on: IN IN t d(bb IN) V bb ST *) Figure 2b: Switching an inductive load t d(ST) V OUT V A OUT ST open drain IL t A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s I L(OL) t *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp, Figure 3a: Turn on into short circuit, IN IN ST ST V OUT VOUT td(SC) I L I t L t td(SC) approx. -- s if Vbb - VOUT > 8.5 V typ. Semiconductor Group 10 BTS 410 E2 Figure 3b: Turn on into overload, IN IN Figure 4a: Overtemperature: Reset if Tj ST V OUT T ST t J t Heating up may require several seconds, Vbb - VOUT < 8.5 V typ. Figure 3c: Short circuit while on: Figure 5a: Open load: detection in ON-state, turn on/off to open load IN IN ST ST t d(ST) V OUT V OUT IL I **) t L open t **) current peak approx. 20 s Semiconductor Group 11 BTS 410 E2 Figure 5b: Open load: detection in ON-state, open load occurs in on-state Figure 6b: Undervoltage restart of charge pump VON(CL) V on IN t d(ST OL1) ST t d(ST OL2) off-state on-state V V bb(over) OUT V V V bb(u rst) bb(o rst) I normal L open normal V bb(under) t bb(u cp) charge pump starts at Vbb(ucp) =5.6 V typ. td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ Figure 7a: Overvoltage: Figure 6a: Undervoltage: IN IN Vbb V bb V bb(under) V ON(CL) Vbb(over) V bb(o rst) Vbb(u cp) Vbb(u rst) V OUT V OUT ST ST open drain t off-state V bb t Semiconductor Group 12 BTS 410 E2 Figure 9a: Overvoltage at short circuit shutdown: IN Vbb V bb(o rst) Output short to GND V OUT short circuit shutdown I L ST t Overvoltage due to power line inductance. No overvoltage autorestart of PROFET after short circuit shutdown. Semiconductor Group 13 BTS 410 E2 Package and Ordering Code All dimensions in mm SMD TO-220AB/5, Opt. E3062 Ordering code BTS410E2 E3062A T&R: Q67060-S6102-A4 Standard TO-220AB/5 BTS 410 E2 Ordering code Q67060-S6102-A2 TO-220AB/5, Option E3043 Ordering code BTS 410 E2 E3043 Q67060-S6102-A3 Semiconductor Group 14 |
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